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STT500
Thyristor-Thyristor Modules
Dimensions in mm (1mm=0.0394") Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800
STT500GK08 STT500GK12 STT500GK14 STT500GK16 STT500GK18
Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 ITSM, IFSM TVJ=TVJM VR=0
2
Test Conditions
Maximum Ratings 785 500
Unit A
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=960A
15000 16000 13000 14400 1125000 1062000 845000 813000 100
A
i dt
TVJ=45oC VR=0 TVJ=TVJM VR=0
A2s
TVJ=TVJM f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=1A diG/dt=1A/us (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA
A/us non repetitive, IT=ITAVM 500 1000 120 60 20 10 -40...+140 140 -40...+125 t=1min t=1s 3000 3600 4.5-7/40-60 11-13/97-115 940 V/us W W V
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TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=500us
C
V~ Nm/lb.in. g
Mounting torque (M6) Terminal connection torque (M8) Typical including screws
STT500
Thyristor-Thyristor Modules
Symbol IRRM VT VTO rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJK dS dA a VD=6V; VD=6V; TVJ=TVJM; TVJ=TVJM;
o
Test Conditions TVJ=TVJM; VR=VRRM IT=1200A; TVJ=25 C For power-loss calculations only (TVJ=TVJM)
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Characteristic Values 40 1.3 0.8 0.38
Unit mA V V m V mA V mA mA mA us us K/W K/W mm mm m/s2
TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM VD=2/3VDRM
2 3 300 400 0.25 10 400 300 2 typ. 350 0.072 0.096 12.7 9.6 50
TVJ=25 C; tp=30us; VD=6V IG=1A; diG/dt=1A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=1A; diG/dt=1A/us TVJ=TVJM; IT=500A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=50V/us; VD=2/3VDRM DC current DC current Creeping distance on surface Creepage distance in air Maximum allowable acceleration
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FEATURES
* International standard package * Direct copper bonded Al2O3-ceramic with copper base plate * Planar passivated chips * Isolation voltage 3600 V~
APPLICATIONS
* Motor control, softstarter * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Solid state switches
ADVANTAGES
* Simple mounting * Improved temperature and power cycling * Reduced protection circuits
STT500
Thyristor-Thyristor Modules
14000 107 1000
VR = 0V
ITSM
12000 A 10000 8000
It 50 Hz 80 % VRRM TVJ = 45C TVJ = 140C
A2s
2
ITAVM
A 900 800 700 600
DC 180 sin 120 60 30
10 6000
6
500
TVJ = 45C
400
TVJ = 140C
4000 2000
300 200 100
0 0.001
105 0.01 0.1
0 1 1 t ms 0 0 25 50 75 100
TC
s t
1
125 C 150
Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
1200 Ptot W
Fig. 2 i2dt versus time (1-10 ms)
Fig. 3 Maximum forward current at case temperature
10 1: IGT, TVJ = 140C
RthKA K/W
V
VG
2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 3 2 1 5 4 6
1000
800
0.03 0.07 0.12 0.2 0.3 0.4 0.6
DC 180 sin 120 60 30
600
1
400
200
IGD, TVJ = 140C
0 0 200 400 600 800 A 0 25 50 75 100 ITAVM / IFAVM 125 C TA 150
0.1 10-3 10-2 10-1
4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W 100 IG 101 A 102
Fig. 4 Power dissipation versus on-state current and ambient temperature
5000 W 4500 4000 Ptot 3500 3000 2500 2000 1500 1000 500 0 0 300 600 900 1200 1500 A 0 IdAVM 25 50 75 100 C 125 TA 150 Circuit B6 3 x STT500 3xMTC500
Fig. 5 Gate trigger characteristics
100 TVJ = 25 C
RthKA K/W
s
tgd typ. Limit
0.01 0.02 0.03 0.045 0.06 0.08 0.12
10
1 0.01 0.1 1 IG A 10
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Fig. 7 Gate trigger delay time
STT500
Thyristor-Thyristor Modules
5000 W 4500 Ptot 4000 3500 3000 2500 2000 1500 1000 500 0 0 300 600 900 1200 A IRMS 0 25 50 75 100 125 C 150 TA Circuit W3 3xMTC500 3 x STT500 RthKA K/W
0.01 0.02 0.03 0.045 0.06 0.08 0.12
Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
0.12 K/W 0.10
Fig. 9 Transient thermal impedance junction to case (per thyristor) RthJC for various conduction angles d:
ZthJC
0.08
d DC 180oC 120oC 60oC 30oC
RthJC (K/W) 0.072 0.0768 0.081 0.092 0.111
0.06 30 60 120 180 DC
0.04
0.02
Constants for ZthJC calculation: i Rthi (K/W) 0.0035 0.0186 0.0432 0.0067 ti (s) 0.0054 0.098 0.54 12 1 2 3 4
0.00 10-3
10-2
10-1
100
101 t
s
102
0.14 K/W 0.12 ZthJK
Fig.10 Transient thermal impedance junction to heatsink (per thyristor) RthJK for various conduction angles d:
0.10 0.08 0.06 0.04 0.02 0.00 10-3 30 60 120 180 DC
d DC 180oC 120oC 60oC 30oC
RthJK (K/W) 0.096 0.1 0.105 0.116 0.135
Constants for ZthJK calculation: i Rthi (K/W) 0.0035 0.0186 0.0432 0.0067 0.024 ti (s) 0.0054 0.098 0.54 12 12 1 2 3 4 5
10-2
10-1
100
101 t
s
102

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